BCW31,215
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- Mfr.Part #
- BCW31,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 4,722
- In Stock ：
- 4,722
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 32V
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Base Part Number :
- BCW31
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 32V
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 110
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BCW31,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW31,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 210mV @ 2.5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 100mA volts.
BCW31,215 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW31,215 Applications
There are a lot of Nexperia USA Inc.
BCW31,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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