BCW32LT1G
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- Mfr.Part #
- BCW32LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23-3
- Stock
- 373
- In Stock ：
- 373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Frequency :
- 1MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- Current Rating :
- 100mA
- hFE Min :
- 200
- Lifecycle Status :
- ACTIVE (Last Updated: 6 hours ago)
- Collector Base Voltage (VCBO) :
- 32V
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 32V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Power Dissipation :
- 225mW
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 32V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 32V
- Voltage - Rated DC :
- 32V
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.11mm
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Length :
- 3.04mm
- Base Part Number :
- BCW32
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Datasheets
- BCW32LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW32LT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.Breakdown input voltage is 32V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW32LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BCW32LT1G Applications
There are a lot of ON Semiconductor
BCW32LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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