BCW32,235
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- Mfr.Part #
- BCW32,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Elements :
- 1
- Published :
- 2005
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BCW32
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Max Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCW32,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW32,235 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 210mV @ 2.5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BCW32,235 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW32,235 Applications
There are a lot of Nexperia USA Inc.
BCW32,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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