BC850CWE6327HTSA1
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- Mfr.Part #
- BC850CWE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT-323
- Stock
- 14,015
- In Stock ：
- 14,015
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PDSO-G3
- RoHS Status :
- RoHS Compliant
- Power - Max :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 600mV
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Configuration :
- Single
- Mount :
- Surface Mount
- Base Part Number :
- BC850
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 250mW
- Additional Feature :
- LOW NOISE
- Frequency - Transition :
- 250MHz
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Datasheets
- BC850CWE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC850CWE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.250MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC850CWE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz
BC850CWE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC850CWE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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