BAW56W135

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Current - Reverse Leakage @ Vr :

500nA @ 80V

JESD-30 Code :

R-PDSO-G3

Max Power Dissipation :

200mW

Speed :

Small Signal =< 200mA (Io), Any Speed

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Operating Temperature - Junction :

150°C Max

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Number of Terminations :

3

Forward Voltage :

1.25V

Base Part Number :

BAW56W

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Element Configuration :

Common Anode

Max Surge Current :

4A

Max Reverse Voltage (DC) :

90V

Current - Average Rectified (Io) :

150mA DC

Radiation Hardening :

No

Mount :

Surface Mount

Number of Elements :

2

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Package / Case :

SC-70, SOT-323

Diode Configuration :

1 Pair Common Anode

Published :

2007

Forward Current :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Repetitive Reverse Voltage (Vrrm) :

90V

Number of Pins :

70

Reference Standard :

AEC-Q101; IEC-60134

Average Rectified Current :

150mA

Peak Non-Repetitive Surge Current :

4A

Recovery Time :

4 ns

Diode Type :

Standard

Reverse Recovery Time :

4 ns

Max Reverse Leakage Current :

500nA

Diode Element Material :

SILICON

Output Current-Max :

0.15A

Pin Count :

3