BAW56,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Power Dissipation-Max :

0.25W

Current - Reverse Leakage @ Vr :

500nA @ 80V

Current - Average Rectified (Io) :

215mA DC

Reverse Recovery Time :

4ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Terminal Finish :

Tin (Sn)

Published :

2007

Output Current-Max :

0.215A

HTS Code :

8541.10.00.70

Diode Configuration :

1 Pair Common Anode

Max Junction Temperature (Tj) :

150°C

Height :

1.1mm

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Max Repetitive Reverse Voltage (Vrrm) :

90V

Max Forward Surge Current (Ifsm) :

4A

Reverse Voltage :

90V

JESD-609 Code :

e3

Base Part Number :

BAW56

Peak Reverse Current :

150μA

Number of Elements :

2

Forward Current :

125mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature - Junction :

150°C Max

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Forward Voltage :

1.25V

Mounting Type :

Surface Mount

Ambient Temperature Range High :

150°C

Diode Type :

Standard

Factory Lead Time :

4 Weeks

Number of Terminations :

3