BAV21,143

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Min Operating Temperature :

-65°C

Reverse Recovery Time :

50 ns

Forward Current :

250mA

Diode Element Material :

SILICON

Peak Non-Repetitive Surge Current :

9A

Contact Plating :

Tin

HTS Code :

8541.10.00.70

JESD-609 Code :

e3

Forward Voltage :

1.25V

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Mounting Type :

Through Hole

Published :

2007

Max Operating Temperature :

175°C

Pin Count :

2

Max Reverse Voltage (DC) :

200V

Terminal Form :

Wire

Case Connection :

Isolated

Package / Case :

DO-204AH, DO-35, Axial

Operating Temperature - Junction :

175°C Max

Average Rectified Current :

250mA

ECCN Code :

EAR99

Peak Reverse Current :

100nA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Base Part Number :

BAV21

Current - Reverse Leakage @ Vr :

100nA @ 200V

Packaging :

Tape and Box (TB)

Factory Lead Time :

6 Weeks

Number of Pins :

2

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Terminations :

2

Current - Average Rectified (Io) :

250mA DC

Power Dissipation-Max :

0.4W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Type :

Standard

Radiation Hardening :

No

Max Repetitive Reverse Voltage (Vrrm) :

250V

Number of Elements :

1

Element Configuration :

Single