BAV20,113

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Diode Element Material :

SILICON

Package / Case :

DO-204AH, DO-35, Axial

Operating Temperature (Max) :

175°C

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Reverse Recovery Time :

50ns

Reverse Current-Max :

0.1μA

JESD-609 Code :

e3

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Number of Elements :

1

Qualification Status :

Not Qualified

Voltage - DC Reverse (Vr) (Max) :

150V

Case Connection :

Isolated

Current - Average Rectified (Io) :

250mA DC

Base Part Number :

BAV20

Diode Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Forward Current :

200mA

Surface Mount :

No

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

100nA @ 150V

Operating Temperature - Junction :

175°C Max

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Terminal Finish :

Tin (Sn)

Number of Pins :

2

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Mounting Type :

Through Hole

Power Dissipation-Max :

0.4W

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Factory Lead Time :

6 Weeks

Terminal Form :

Wire

Forward Voltage :

1.2V

Published :

1999

HTS Code :

8541.10.00.70

ECCN Code :

EAR99