BAV21,113

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Pins :

2

Voltage - DC Reverse (Vr) (Max) :

200V

Current - Reverse Leakage @ Vr :

100nA @ 200V

Number of Terminations :

2

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Operating Temperature (Max) :

175°C

Forward Current :

250mA

Reverse Current-Max :

0.1μA

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BAV21

HTS Code :

8541.10.00.70

Terminal Finish :

Tin (Sn)

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Element Material :

SILICON

Forward Voltage :

1.2V

Number of Elements :

1

Reverse Recovery Time :

50ns

Package / Case :

DO-204AH, DO-35, Axial

Published :

2007

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Average Rectified (Io) :

250mA DC

Packaging :

Tape and Reel (TR)

Surface Mount :

No

Qualification Status :

Not Qualified

Diode Type :

Standard

Configuration :

Single

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Operating Temperature - Junction :

175°C Max

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Power Dissipation-Max :

0.4W

Mounting Type :

Through Hole

ECCN Code :

EAR99

Pin Count :

2