BAT54VV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Published :

2004

Packaging :

Tape and Reel (TR)

Max Forward Surge Current (Ifsm) :

600mA

Current - Reverse Leakage @ Vr :

2μA @ 25V

Capacitance :

82pF

Current - Average Rectified (Io) :

200mA DC

Radiation Hardening :

No

Forward Voltage :

800mV

Case Code (Imperial) :

0603

HTS Code :

8541.10.00.70

Max Reverse Leakage Current :

2µA

Length :

1.6002mm

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

125°C

REACH SVHC :

No SVHC

Voltage - Rated :

50V

Speed :

Small Signal =< 200mA (Io), Any Speed

Number of Terminations :

6

Operating Temperature - Junction :

-65°C~125°C

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BAT54VV

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Lead Free :

Lead Free

Tolerance :

1%

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Diode Configuration :

3 Independent

Contact Plating :

Tin

Peak Reverse Current :

2µA

Diode Type :

Schottky

Output Current-Max :

0.2A

Thickness :

889μm

Number of Elements :

3

Width :

787.4μm

Min Operating Temperature :

-55°C

Diode Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Case Code (Metric) :

1608

Forward Current :

200mA

Max Surge Current :

600mA

Factory Lead Time :

4 Weeks

Max Power Dissipation :

170mW

Peak Non-Repetitive Surge Current :

600mA

Max Repetitive Reverse Voltage (Vrrm) :

30V

Average Rectified Current :

200mA

Pin Count :

6

Voltage - Forward (Vf) (Max) @ If :

800mV @ 100mA

Height :

600μm

JESD-609 Code :

e3

Terminal Form :

Flat

Mounting Type :

Surface Mount

Power Dissipation :

170mW