BAP65-02,135
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- Mfr.Part #
- BAP65-02,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-79, SOD-523
- Datasheet
- Download
- Description
- RF DIODE PIN 30V 715MW SOD523
- Stock
- 7,374
- In Stock ：
- 7,374
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Pin Count :
- 2
- Capacitance @ Vr, F :
- 0.375pF @ 20V 1MHz
- Voltage - Peak Reverse (Max) :
- 30V
- HTS Code :
- 8541.10.00.70
- Terminal Finish :
- Tin (Sn)
- Current - Max :
- 100mA
- Diode Forward Resistance-Max :
- 0.95Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Power Dissipation-Max :
- 715mW
- Packaging :
- Tape and Reel (TR)
- Resistance @ If, F :
- 350mOhm @ 100mA 100MHz
- Breakdown Voltage-Min :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Diode Res Test Frequency :
- 100MHz
- Diode Res Test Current :
- 5mA
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- SC-79, SOD-523
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Diode Capacitance-Nom :
- 0.65pF
- Diode Type :
- PIN - Single
- Base Part Number :
- BAP65
- Minority Carrier Lifetime-Nom :
- 0.17 µs
- Factory Lead Time :
- 13 Weeks
- Datasheets
- BAP65-02,135
PIN - Single 0.375pF @ 20V 1MHz -65°C~150°C TJ 260 Tape & Reel (TR) SC-79, SOD-523
BAP65-02,135 Overview
This device is designed to operate from the maximal current of 100mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 30V.Occasionally, this device may run at its lowest possible breakdown voltage of 30V.
BAP65-02,135 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V
BAP65-02,135 Applications
There are a lot of NXP USA Inc.
BAP65-02,135 applications of RF diodes.
- Sensor interfaces of security systems
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
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