BAP63-03,115

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Mfr.Part #
BAP63-03,115
Manufacturer
NXP Semiconductors
Package / Case
SC-76, SOD-323
Datasheet
Download
Description
RF DIODE PIN 50V 500MW SOD323
Stock
36,767
In Stock :
36,767

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Frequency Band :
S B
Reach Compliance Code :
Unknown
HTS Code :
8541.10.00.70
Operating Temperature :
-65°C~150°C TJ
Base Part Number :
BAP63
Diode Capacitance-Max :
0.32pF
Diode Type :
PIN - Single
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
Package / Case :
SC-76, SOD-323
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Diode Res Test Current :
0.5mA
Number of Elements :
1
Voltage - Peak Reverse (Max) :
50V
JESD-30 Code :
R-PDSO-G2
Diode Capacitance-Nom :
0.4pF
Terminal Finish :
Tin (Sn)
Diode Res Test Frequency :
100MHz
Resistance @ If, F :
1.5Ohm @ 100mA 100MHz
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
2
Current - Max :
100mA
Power Dissipation-Max :
500mW
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Terminal Form :
Gull wing
Capacitance @ Vr, F :
0.32pF @ 20V 1MHz
Minority Carrier Lifetime-Nom :
0.31 μs
Breakdown Voltage-Min :
50V
Packaging :
Tape and Reel (TR)
Application :
ATTENUATOR; SWITCHING
Diode Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BAP63-03,115
Introducing Diodes - RF NXP Semiconductors BAP63-03,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:BAP63, Package / Case:SC-76, SOD-323, Number of Terminations:2, BAP63-03,115 pinout, BAP63-03,115 datasheet PDF, BAP63-03,115 amp .Beyond Diodes - RF NXP Semiconductors BAP63-03,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP63-03,115


PIN - Single 0.32pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

BAP63-03,115 Overview


Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.The maximum reverse voltage of this device is in accordance with its applicable specifications.The device may run at its lowest breakdown voltage of 50V occasionally.

BAP63-03,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V


BAP63-03,115 Applications


There are a lot of NXP USA Inc.
BAP63-03,115 applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators
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