BAP64-06W,115
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- Mfr.Part #
- BAP64-06W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF DIODE PIN 100V 240MW SOT323-3
- Stock
- 2,457
- In Stock ：
- 2,457
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Packaging :
- Tape and Reel (TR)
- Resistance @ If, F :
- 1.35Ohm @ 100mA 100MHz
- Diode Capacitance-Nom :
- 0.37pF
- Minority Carrier Lifetime-Nom :
- 1.55 μs
- Voltage - Peak Reverse (Max) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency Band :
- S B
- HTS Code :
- 8541.10.00.70
- Current - Max :
- 100mA
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 240mW
- Factory Lead Time :
- 13 Weeks
- Diode Res Test Frequency :
- 100MHz
- Number of Terminations :
- 3
- Configuration :
- COMMON ANODE, 2 ELEMENTS
- Terminal Position :
- Dual
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Diode Type :
- PIN - 1 Pair Common Anode
- Application :
- ATTENUATOR; SWITCHING
- Operating Temperature :
- -65°C~150°C TJ
- Reverse Test Voltage :
- 1V
- Diode Element Material :
- SILICON
- Diode Capacitance-Max :
- 0.35pF
- Pin Count :
- 3
- Breakdown Voltage-Min :
- 100V
- Diode Res Test Current :
- 0.5mA
- Base Part Number :
- BAP64-06
- Capacitance @ Vr, F :
- 0.35pF @ 20V 1MHz
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Datasheets
- BAP64-06W,115
PIN - 1 Pair Common Anode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323
BAP64-06W,115 Overview
A maximum current of 100mA is required to operate this device.This device operates at a maximum peak reverse voltage of 100V according to its specifications.The breakdown voltage of this device may occasionally be as low as 100V.In order to obtain a valid conversion result, the reverse test voltage must be within 1V.
BAP64-06W,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V
BAP64-06W,115 Applications
There are a lot of NXP USA Inc.
BAP64-06W,115 applications of RF diodes.
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
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