AUIRLR3636

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Length :

6.73mm

Radiation Hardening :

No

Height :

2.39mm

Power Dissipation-Max :

143W Tc

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

99A

Vgs (Max) :

±16V

Series :

HEXFET®

Fall Time (Typ) :

69 ns

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

50A

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Case Connection :

DRAIN

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Turn On Delay Time :

45 ns

Resistance :

6.8mOhm

Base Part Number :

AUIRLR3636

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Contact Plating :

Tin

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

143W

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Elements :

1

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Rise Time :

216ns

Turn-Off Delay Time :

43 ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount