AUIRLR2905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount, Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Turn On Delay Time :

11 ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Series :

HEXFET®

Continuous Drain Current (ID) :

42A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

ECCN Code :

EAR99

Number of Terminations :

2

Vgs (Max) :

±16V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

26 ns

Width :

6.22mm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Packaging :

Tube

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Rise Time :

84ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Factory Lead Time :

52 Weeks

Power Dissipation :

110W

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1V

JESD-30 Code :

R-PSSO-G2

Height :

2.39mm

Contact Plating :

Tin

Power Dissipation-Max :

110W Tc