AUIRL7736M2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 63W Tc

Additional Feature :

HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 4.5V

Rise Time :

210ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.8V

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

22A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

48 ns

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3m Ω @ 67A, 10V

Power Dissipation :

63W

Mount :

Surface Mount

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

179A Tc

Pulsed Drain Current-Max (IDM) :

450A

Fall Time (Typ) :

76 ns

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

FET Type :

N-Channel

Number of Pins :

9

Continuous Drain Current (ID) :

179A

Turn-Off Delay Time :

56 ns

Vgs(th) (Max) @ Id :

2.5V @ 150μA

REACH SVHC :

No SVHC

Package / Case :

DirectFET™ Isometric M4

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

5055pF @ 25V

JESD-30 Code :

R-XBCC-N5

Gate to Source Voltage (Vgs) :

16V

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

0.003Ohm

Operating Mode :

ENHANCEMENT MODE