AUIRFZ44NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Rise Time :

60ns

Packaging :

Tube

Threshold Voltage :

2V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation-Max :

3.8W Ta 94W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

Series :

HEXFET®

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Fall Time (Typ) :

45 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

ECCN Code :

EAR99

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Published :

2008

Height :

4.83mm

Radiation Hardening :

No

Length :

10.67mm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Turn-Off Delay Time :

44 ns

Terminal Form :

Gull wing

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.8W

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

49A

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE