AUIRFS3306TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Height :

4.83mm

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Width :

9.65mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

77 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

2

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

230W

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rise Time :

76ns

Pulsed Drain Current-Max (IDM) :

620A

Continuous Drain Current (ID) :

120A

Series :

HEXFET®

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 150μA

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0042Ohm

Factory Lead Time :

16 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

40 ns

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Pins :

3

Mounting Type :

Surface Mount

Power Dissipation-Max :

230W Tc

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99