AUIRFS3004TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

300 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Pulsed Drain Current-Max (IDM) :

1310A

Surface Mount :

yes

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Drain-source On Resistance-Max :

0.00175Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max :

380W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Published :

2011

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

195A

Base Part Number :

AUIRFS3004

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Drain to Source Voltage (Vdss) :

40V