AUIRFR9024N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

38W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

62 mJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

175m Ω @ 6.6A, 10V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

11A

Drain-source On Resistance-Max :

0.175Ohm

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2014

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Terminations :

2

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Pulsed Drain Current-Max (IDM) :

44A

FET Type :

P-Channel