AUIRFP4568

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Terminations :

3

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AC

Resistance :

4.8mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Avalanche Energy Rating (Eas) :

763 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

517W Tc

Continuous Drain Current (ID) :

171A

Drain to Source Voltage (Vdss) :

150V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Published :

2015

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 103A, 10V

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

150V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

171A Tc

FET Type :

N-Channel

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

684A

Input Capacitance (Ciss) (Max) @ Vds :

10470pF @ 50V

Additional Feature :

ULTRA LOW RESISTANCE