AUIRFP1405
- Mfr.Part #
- AUIRFP1405
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- AUIRFP1405 - 55V-60V N-CHANNEL A
- Stock
- 6,271
- In Stock :
- 6,271
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.7mm
- Continuous Drain Current (ID) :
- 95A
- JEDEC-95 Code :
- TO-247AC
- REACH SVHC :
- No SVHC
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 12 ns
- Published :
- 2011
- Fall Time (Typ) :
- 150 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 5.3m Ω @ 95A, 10V
- Rise Time :
- 160ns
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 15.87mm
- Number of Pins :
- 3
- Width :
- 5.31mm
- Turn-Off Delay Time :
- 140 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 640A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 310W Tc
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 95A Tc
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Power Dissipation :
- 310W
- Datasheets
- AUIRFP1405

N-Channel Tube 5.3m Ω @ 95A, 10V ±20V 5600pF @ 25V 180nC @ 10V TO-247-3
AUIRFP1405 Overview
A device's maximal input capacitance is 5600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 95A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 140 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 640A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
AUIRFP1405 Features
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 640A.
AUIRFP1405 Applications
There are a lot of Infineon Technologies
AUIRFP1405 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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