AUIRFB8407

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Width :

3.43mm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Nominal Vgs :

3 V

Number of Pins :

3

Turn-Off Delay Time :

78 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Package / Case :

TO-220-3

Mount :

Through Hole

Power Dissipation :

230W

Vgs (Max) :

±20V

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Length :

10.67mm

Published :

2001

Power Dissipation-Max :

230W Tc

FET Type :

N-Channel

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.02mm

ECCN Code :

EAR99

Fall Time (Typ) :

53 ns

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Turn On Delay Time :

19 ns

Drain to Source Voltage (Vdss) :

40V

Threshold Voltage :

3V

Rise Time :

70ns

Element Configuration :

Single

Continuous Drain Current (ID) :

195A

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

195A Tc