AUIRFB8407

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

78 ns

Continuous Drain Current (ID) :

195A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Packaging :

Tube

Power Dissipation :

230W

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Turn On Delay Time :

19 ns

Length :

10.67mm

Power Dissipation-Max :

230W Tc

Fall Time (Typ) :

53 ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

Published :

2001

Mounting Type :

Through Hole

Series :

HEXFET®

Mount :

Through Hole

Element Configuration :

Single

Height :

9.02mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Number of Channels :

1

Width :

3.43mm

Threshold Voltage :

3V

Rise Time :

70ns

Radiation Hardening :

No

ECCN Code :

EAR99

Nominal Vgs :

3 V

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

4V @ 150μA

Package / Case :

TO-220-3

Vgs (Max) :

±20V