AUIRF9540N
- Mfr.Part #
- AUIRF9540N
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- AUIRF9540 - 20V-150V P-CHANNEL A
- Stock
- 106,899
- In Stock :
- 106,899
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 51 ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Drain to Source Breakdown Voltage :
- -100V
- Gate Charge (Qg) (Max) @ Vgs :
- 97nC @ 10V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 140W Tc
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 117m Ω @ 11A, 10V
- Power Dissipation :
- 140W
- Transistor Application :
- SWITCHING
- Rise Time :
- 67ns
- Series :
- Automotive, AEC-Q101
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Published :
- 2007
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pulsed Drain Current-Max (IDM) :
- 76A
- Turn On Delay Time :
- 15 ns
- Height :
- 16.51mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 100V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- -23A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Length :
- 10.66mm
- Threshold Voltage :
- -2V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 250
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 51 ns
- Datasheets
- AUIRF9540N

P-Channel Tube 117m Ω @ 11A, 10V ±20V 1300pF @ 25V 97nC @ 10V 100V TO-220-3
AUIRF9540N Description
This cellular architecture of HEXFET? Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.
AUIRF9540N Features
-
Fast Switching
-
Fully Avalanche Rated
-
Dynamic dV/dT Rating
-
Automotive Qualified*
-
Lead-Free, RoHS Compliant
-
Advanced Planar Technology
-
175°C Operating Temperature
-
Repetitive Avalanche Allowed up to Tjmax
AUIRF9540N Applications
-
Automotive
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