AUIRF7799L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

35A

Rise Time :

33.5ns

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Power Dissipation :

125W

Package / Case :

DirectFET™ Isometric L8

Published :

2015

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Series :

HEXFET®

Transistor Element Material :

SILICON

Turn On Delay Time :

36.3 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Surface Mount

Turn-Off Delay Time :

73.9 ns

Fall Time (Typ) :

26.6 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

15

Drain-source On Resistance-Max :

0.038Ohm

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

6.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

250V

Input Capacitance (Ciss) (Max) @ Vds :

6714pF @ 25V

Case Connection :

DRAIN

Power Dissipation-Max :

4.3W Ta 125W Tc

Avalanche Energy Rating (Eas) :

325 mJ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

38m Ω @ 21A, 10V

Number of Elements :

1

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-XBCC-N9

Packaging :

Tape and Reel (TR)

Number of Terminations :

9