AUIRF7736M2TR

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Mfr.Part #
AUIRF7736M2TR
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric M4
Datasheet
Download
Description
MOSFET N-CH 40V 22A DIRECTFET
Stock
20,053
In Stock :
20,053

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
High Reliability
Fall Time (Typ) :
27 ns
Terminal Position :
BOTTOM
Power Dissipation-Max :
2.5W Ta 63W Tc
Pulsed Drain Current-Max (IDM) :
432A
JESD-609 Code :
e1
Vgs(th) (Max) @ Id :
4V @ 150μA
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
286 mJ
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
108nC @ 10V
Drain to Source Breakdown Voltage :
40V
Series :
HEXFET®
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
63W
Factory Lead Time :
16 Weeks
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4267pF @ 25V
Drain-source On Resistance-Max :
0.003Ohm
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Number of Terminations :
5
Rise Time :
43ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-XBCC-N5
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
9
Turn On Delay Time :
21 ns
Threshold Voltage :
3V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
22A Ta 108A Tc
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Continuous Drain Current (ID) :
22A
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2010
Package / Case :
DirectFET™ Isometric M4
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
3m Ω @ 65A, 10V
REACH SVHC :
No SVHC
Number of Elements :
1
Turn-Off Delay Time :
39 ns
Datasheets
AUIRF7736M2TR
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies AUIRF7736M2TR from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:5, Operating Temperature:-55°C~175°C TJ, Number of Pins:9, Package / Case:DirectFET™ Isometric M4, AUIRF7736M2TR pinout, AUIRF7736M2TR datasheet PDF, AUIRF7736M2TR amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies AUIRF7736M2TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies AUIRF7736M2TR


N-Channel Tape & Reel (TR) 3m Ω @ 65A, 10V ±20V 4267pF @ 25V 108nC @ 10V DirectFET™ Isometric M4

AUIRF7736M2TR Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 286 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4267pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 39 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 432A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 21 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

AUIRF7736M2TR Features


the avalanche energy rating (Eas) is 286 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 432A.
a threshold voltage of 3V


AUIRF7736M2TR Applications


There are a lot of Infineon Technologies
AUIRF7736M2TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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