AUIRF7732S2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Published :

2015

Rise Time :

123ns

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Pulsed Drain Current-Max (IDM) :

220A

JESD-30 Code :

R-XBCC-N3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Drain-source On Resistance-Max :

0.00695Ohm

Avalanche Energy Rating (Eas) :

45 mJ

Vgs(th) (Max) @ Id :

4V @ 50μA

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Package / Case :

DirectFET™ Isometric SC

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Power Dissipation :

41W

Fall Time (Typ) :

37 ns

Threshold Voltage :

4V

Vgs (Max) :

±20V

FET Type :

N-Channel

Continuous Drain Current (ID) :

14A

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

55A

Rds On (Max) @ Id, Vgs :

6.95m Ω @ 33A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 41W Tc

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Series :

HEXFET®

Number of Pins :

7

Gate to Source Voltage (Vgs) :

16V