AUIRF7669L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

850 mJ

Rise Time :

30ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

Turn On Delay Time :

15 ns

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

114A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Factory Lead Time :

16 Weeks

Number of Pins :

15

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

460A

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power Dissipation :

100W

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 68A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Power Dissipation-Max :

3.3W Ta 100W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Ta 114A Tc

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

375A

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 25V

Turn-Off Delay Time :

27 ns

Number of Terminations :

9

Lead Free :

Lead Free

Radiation Hardening :

No

Package / Case :

DirectFET™ Isometric L8

Drain-source On Resistance-Max :

0.0044Ohm

JESD-30 Code :

R-XBCC-N9

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)