AUIRF7640S2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

6.2 ns

Power Dissipation :

30W

Power Dissipation-Max :

2.4W Ta 30W Tc

Avalanche Energy Rating (Eas) :

57 mJ

Terminal Position :

BOTTOM

Factory Lead Time :

16 Weeks

Published :

2010

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

84A

Package / Case :

DirectFET™ Isometric SB

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Rise Time :

12ns

ECCN Code :

EAR99

Turn On Delay Time :

4 ns

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

6.3 ns

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Case Connection :

DRAIN

Number of Terminations :

2

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Rds On (Max) @ Id, Vgs :

36m Ω @ 13A, 10V

Continuous Drain Current (ID) :

5.8A

JESD-30 Code :

R-XBCC-N2

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

77A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 25μA

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Pins :

6

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta 21A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE