AUIRF5210STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.1W Ta 170W Tc

Drain to Source Voltage (Vdss) :

100V

Max Operating Temperature :

150°C

Supplier Device Package :

D2PAK

Rds On (Max) @ Id, Vgs :

60mOhm @ 38A, 10V

Series :

HEXFET®

Rds On Max :

60 mΩ

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Min Operating Temperature :

-55°C

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

38A

Radiation Hardening :

No

Power Dissipation :

3.1W

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rise Time :

63ns

Number of Elements :

1

Published :

2015

Input Capacitance :

2.78nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

55 ns

Drain to Source Breakdown Voltage :

-100V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

72 ns

FET Type :

P-Channel

Drain to Source Resistance :

60mOhm

Number of Pins :

3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)