AUIRF4905STRL
- Mfr.Part #
- AUIRF4905STRL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 42A D2PAK
- Stock
- 11,060
- In Stock :
- 11,060
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 55V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 42A, 10V
- Series :
- Automotive, AEC-Q101, HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 64 ns
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.02Ohm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Rise Time :
- 99ns
- Continuous Drain Current (ID) :
- 42A
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Power Dissipation :
- 17W
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- -55V
- Turn On Delay Time :
- 20 ns
- Turn-Off Delay Time :
- 51 ns
- Number of Channels :
- 1
- Power Dissipation-Max :
- 200W Tc
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- AUIRF4905STRL

P-Channel Tape & Reel (TR) 20m Ω @ 42A, 10V ±20V 3500pF @ 25V 180nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF4905STRL Description
This cellular architecture of HEXFET? Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.
AUIRF4905STRL Features
-
Advanced Planar Technology
-
P-Channel MOSFET
-
Low On-Resistance
-
150??C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
-
Lead-Free, RoHS Compliant
-
Automotive Qualified
AUIRF4905STRL Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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