AUIRF3205Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.51mm

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Power Dissipation :

170W

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Fall Time (Typ) :

67 ns

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Avalanche Energy Rating (Eas) :

250 mJ

Turn On Delay Time :

18 ns

Mount :

Through Hole

Width :

4.83mm

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

170W Tc

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

2010

Number of Pins :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0065ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

16 Weeks

Rise Time :

95ns

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

440A

Continuous Drain Current (ID) :

75A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

Packaging :

Tube

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Series :

HEXFET®