AUIRF2903ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Fall Time (Typ) :

37 ns

Number of Terminations :

2

Power Dissipation-Max :

231W Tc

FET Type :

N-Channel

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1020A

Turn-Off Delay Time :

48 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Rise Time :

100ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

160A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Power Dissipation :

231W

Drain-source On Resistance-Max :

0.0024Ohm

Series :

HEXFET®

Turn On Delay Time :

24 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Vgs(th) (Max) @ Id :

4V @ 150μA

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount