AUIRF2804L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

HEXFET®

Mount :

Through Hole

Drain to Source Breakdown Voltage :

40V

Published :

2003

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

270A

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

195A

Fall Time (Typ) :

130 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Height :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tube

Rise Time :

120ns

Drain-source On Resistance-Max :

0.002Ohm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

540 mJ

Threshold Voltage :

2V

REACH SVHC :

No SVHC

Number of Terminations :

3

Width :

4.6228mm

Mounting Type :

Through Hole

Turn On Delay Time :

13 ns

Turn-Off Delay Time :

130 ns

Length :

10.668mm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation :

300W

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation-Max :

300W Tc

Number of Elements :

1