AUIRF1010EZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

140W

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Turn On Delay Time :

19 ns

Continuous Drain Current (ID) :

75A

JESD-609 Code :

e3

Radiation Hardening :

No

Power Dissipation-Max :

140W Tc

Turn-Off Delay Time :

38 ns

Drain-source On Resistance-Max :

0.0085Ohm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Height :

4.83mm

Length :

10.67mm

Threshold Voltage :

2V

Element Configuration :

Single

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Additional Feature :

ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

60V

Rise Time :

90ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Published :

2010

JESD-30 Code :

R-PDSO-G2

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 51A, 10V

Mount :

Surface Mount

Terminal Position :

Dual

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Number of Terminations :

2

Packaging :

Tube

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

54 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Contact Plating :

Tin