AUIRF1010EZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

Series :

HEXFET®

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

54 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0085Ohm

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 51A, 10V

Turn On Delay Time :

19 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Number of Terminations :

2

Rise Time :

90ns

Continuous Drain Current (ID) :

75A

Contact Plating :

Tin

Case Connection :

DRAIN

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

ULTRA-LOW RESISTANCE

Radiation Hardening :

No

Published :

2010

Number of Pins :

3

Power Dissipation-Max :

140W Tc

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

38 ns

Terminal Position :

Dual

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Length :

10.67mm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

140W