APTGT75DA120T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

610 ns

Mount :

Chassis Mount

Number of Pins :

1

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Package / Case :

SP1

Number of Terminations :

12

Published :

2007

Current - Collector Cutoff (Max) :

250μA

Input Capacitance (Cies) @ Vce :

5.34nF @ 25V

Reach Compliance Code :

Unknown

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

2.1V

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

NTC Thermistor :

yes

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Capacitance :

5.34nF

Max Collector Current :

110A

Pin Count :

12

Input :

Standard

Power - Max :

357W

Transistor Application :

Motor Control

Max Power Dissipation :

357W

Operating Temperature :

-40°C~150°C TJ

Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Terminal Form :

THROUGH-HOLE

RoHS Status :

RoHS Compliant

IGBT Type :

Trench Field Stop

Number of Elements :

1

Turn On Time :

335 ns

Collector Emitter Breakdown Voltage :

1.2kV