APTGT75DA120D1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Max Power Dissipation :

357W

Turn On Time :

390 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Case Connection :

Isolated

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Chassis Mount

Published :

2004

JESD-609 Code :

e1

NTC Thermistor :

No

Number of Terminations :

7

Power - Max :

357W

Polarity/Channel Type :

N-Channel

Mount :

Chassis Mount

RoHS Status :

RoHS Compliant

Input Capacitance (Cies) @ Vce :

5345nF @ 25V

Turn Off Time-Nom (toff) :

830 ns

Collector Emitter Voltage (VCEO) :

2.1V

Input :

Standard

Pin Count :

7

Number of Elements :

1

IGBT Type :

Trench Field Stop

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

JESD-30 Code :

R-XUFM-X7

Input Capacitance :

5.345μF

Current - Collector Cutoff (Max) :

4mA

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Transistor Application :

Motor Control

Package / Case :

D1

Collector Emitter Breakdown Voltage :

1.2kV

Max Collector Current :

110A