APTGT30DDA60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

IGBT Type :

Trench Field Stop

Turn Off Time-Nom (toff) :

310 ns

JESD-30 Code :

R-XUFM-X25

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

600V

Terminal Position :

UPPER

Max Power Dissipation :

90W

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Input :

Standard

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Chassis Mount

Qualification Status :

Not Qualified

Gate-Emitter Voltage-Max :

20V

Package / Case :

SP3

Number of Elements :

2

Configuration :

Dual Boost Chopper

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

170 ns

Collector Emitter Voltage (VCEO) :

1.9V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C~175°C TJ

Pin Count :

25

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

25

Current - Collector Cutoff (Max) :

250μA

Input Capacitance :

1.6nF

NTC Thermistor :

yes

Power - Max :

90W

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Cies) @ Vce :

1.6nF @ 25V

Published :

2006

Transistor Application :

POWER CONTROL

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Max Collector Current :

50A