APTGT30DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Radiation Hardening :

No

Input Capacitance (Cies) @ Vce :

2.5nF @ 25V

IGBT Type :

Trench Field Stop

Package / Case :

SP1

Turn Off Time-Nom (toff) :

850 ns

Pbfree Code :

yes

Max Power Dissipation :

210W

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

250μA

Max Collector Current :

45A

Terminal Position :

UPPER

Configuration :

Single

Collector Emitter Voltage (VCEO) :

2.4V

NTC Thermistor :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

1700V

Transistor Application :

Motor Control

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

1.7kV

Number of Elements :

1

Case Connection :

Isolated

Number of Terminations :

12

RoHS Status :

RoHS Compliant

Published :

2012

Factory Lead Time :

22 Weeks

Power - Max :

210W

Gate-Emitter Voltage-Max :

20V

Pin Count :

12

Turn On Time :

170 ns

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Number of Pins :

1

Input Capacitance :

2.5nF

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

THROUGH-HOLE

Input :

Standard