APTGT100DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

NTC Thermistor :

yes

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Number of Pins :

20

Collector Emitter Breakdown Voltage :

1.7kV

Power - Max :

560W

Collector Emitter Voltage (VCEO) :

1.7kV

Published :

2006

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Factory Lead Time :

22 Weeks

Turn On Time :

450 ns

Current - Collector Cutoff (Max) :

250μA

Input :

Standard

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1700V

VCEsat-Max :

2.4 V

Number of Terminations :

12

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

150A

Max Power Dissipation :

560W

Turn Off Time-Nom (toff) :

1100 ns

IGBT Type :

Trench Field Stop

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

12

Package / Case :

SP4

Input Capacitance (Cies) @ Vce :

9nF @ 25V

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 100A

Input Capacitance :

9nF

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Case Connection :

Isolated

JESD-30 Code :

R-XUFM-X12

Additional Feature :

AVALANCHE RATED