APTGT100A60T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Modules

Case Connection :

Isolated

Turn Off Time-Nom (toff) :

370 ns

Collector Emitter Voltage (VCEO) :

600V

Published :

2007

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Cies) @ Vce :

6.1nF @ 25V

Power - Max :

340W

Turn On Time :

180 ns

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Number of Pins :

12

Pin Count :

12

Terminal Position :

UPPER

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 100A

Element Configuration :

Dual

Package / Case :

SP1

Input Capacitance :

6.1nF

Gate-Emitter Voltage-Max :

20V

Current - Collector Cutoff (Max) :

250μA

Input :

Standard

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

IGBT Type :

Trench Field Stop

Pbfree Code :

yes

Operating Temperature :

-40°C~175°C TJ

JESD-609 Code :

e1

NTC Thermistor :

yes

Number of Terminations :

12

Number of Elements :

2

Mount :

Chassis Mount, Screw

Factory Lead Time :

36 Weeks

Mounting Type :

Chassis Mount

VCEsat-Max :

1.9 V

Configuration :

Half Bridge

Max Collector Current :

150A

ECCN Code :

EAR99

Max Power Dissipation :

340W

Radiation Hardening :

No