APTGF50VDA120T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Max Operating Temperature :

150°C

IGBT Type :

NPT

Voltage - Collector Emitter Breakdown (Max) :

1200V

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Pin Count :

25

Number of Terminations :

20

Gate-Emitter Voltage-Max :

20V

Input Capacitance :

3.45nF

Width :

40.8mm

Published :

2012

Case Connection :

Isolated

Max Power Dissipation :

312W

Turn On Time :

100 ns

Collector Emitter Saturation Voltage :

3.2V

Max Collector Current :

70A

Height :

11.5mm

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Transistor Application :

POWER CONTROL

Qualification Status :

Not Qualified

Length :

73.4mm

Current - Collector Cutoff (Max) :

250μA

Input :

Standard

NTC Thermistor :

yes

Element Configuration :

Dual

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw, Through Hole

Number of Elements :

2

Turn Off Time-Nom (toff) :

400 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

1.2kV

ECCN Code :

EAR99

Package / Case :

SP3

Configuration :

Dual Boost Chopper

JESD-30 Code :

R-XUFM-X20

Min Operating Temperature :

-40°C

Collector Emitter Breakdown Voltage :

1.2kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Cies) @ Vce :

3.45nF @ 25V

Terminal Position :

UPPER