APT7M120S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e1

Continuous Drain Current (ID) :

8A

JESD-30 Code :

R-PDSO-G2

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Packaging :

Bulk

Pin Count :

3

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

1200V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

1200V

Vgs (Max) :

±30V

Factory Lead Time :

19 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Series :

POWER MOS 8™

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2565pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Elements :

1

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation-Max :

335W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 1mA

Avalanche Energy Rating (Eas) :

575 mJ

Terminal Position :

Dual

Drain-source On Resistance-Max :

2.5Ohm

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 3A, 10V

Number of Terminations :

2

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

245

Published :

1997

Operating Mode :

ENHANCEMENT MODE