APT7F80K
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- Mfr.Part #
- APT7F80K
- Manufacturer
- Microsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7A TO220
- Stock
- 49,018
- In Stock ：
- 49,018
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Power Dissipation :
- 225W
- Drain Current-Max (Abs) (ID) :
- 7A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Turn On Delay Time :
- 8 ns
- Terminal Finish :
- PURE MATTE TIN
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 285 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 25A
- Continuous Drain Current (ID) :
- 7A
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 7.1A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 225W Tc
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- POWER MOS 8™
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 800V
- Fall Time (Typ) :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1335pF @ 25V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Turn-Off Delay Time :
- 33 ns
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 4A, 10V
- Pin Count :
- 3
- Rise Time :
- 11ns
- FET Type :
- N-Channel
- Datasheets
- APT7F80K
N-Channel Tube 1.5 Ω @ 4A, 10V ±30V 1335pF @ 25V 43nC @ 10V TO-220-3
APT7F80K Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 285 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1335pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 25A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT7F80K Features
the avalanche energy rating (Eas) is 285 mJ
a continuous drain current (ID) of 7A
the turn-off delay time is 33 ns
based on its rated peak drain current 25A.
APT7F80K Applications
There are a lot of Microsemi Corporation
APT7F80K applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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