APT75M50B2
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- Mfr.Part #
- APT75M50B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 75A T-MAX
- Stock
- 46,166
- In Stock ：
- 46,166
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 25V
- Pin Count :
- 3
- Package / Case :
- TO-247-3 Variant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 500V
- Fall Time (Typ) :
- 39 ns
- Terminal Position :
- Single
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 290nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- High Reliability
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Terminal Finish :
- PURE MATTE TIN
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn On Delay Time :
- 45 ns
- Continuous Drain Current (ID) :
- 75A
- Number of Pins :
- 3
- Power Dissipation-Max :
- 1040W Tc
- Drain-source On Resistance-Max :
- 0.075Ohm
- Published :
- 1997
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 37A, 10V
- Power Dissipation :
- 1.04kW
- Factory Lead Time :
- 22 Weeks
- Packaging :
- Tube
- Rise Time :
- 55ns
- Current Rating :
- 75A
- Turn-Off Delay Time :
- 120 ns
- Datasheets
- APT75M50B2
N-Channel Tube 75m Ω @ 37A, 10V ±30V 11600pF @ 25V 290nC @ 10V TO-247-3 Variant
APT75M50B2 Overview
A device's maximum input capacitance is 11600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT75M50B2 Features
a continuous drain current (ID) of 75A
the turn-off delay time is 120 ns
APT75M50B2 Applications
There are a lot of Microsemi Corporation
APT75M50B2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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