APT75F50L
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- Mfr.Part #
- APT75F50L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 75A TO264
- Stock
- 23,936
- In Stock ：
- 23,936
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- PURE MATTE TIN
- Pulsed Drain Current-Max (IDM) :
- 230A
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 45 ns
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Rise Time :
- 55ns
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 120 ns
- Fall Time (Typ) :
- 39 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 25V
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1997
- Power Dissipation :
- 1.04kW
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Continuous Drain Current (ID) :
- 75A
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 290nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 25 Weeks
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 37A, 10V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Series :
- POWER MOS 8™
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 1040W Tc
- Drain-source On Resistance-Max :
- 0.075Ohm
- DS Breakdown Voltage-Min :
- 500V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- APT75F50L
N-Channel Tube 75m Ω @ 37A, 10V ±30V 11600pF @ 25V 290nC @ 10V 500V TO-264-3, TO-264AA
APT75F50L Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11600pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 120 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 230A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT75F50L Features
a continuous drain current (ID) of 75A
the turn-off delay time is 120 ns
based on its rated peak drain current 230A.
a 500V drain to source voltage (Vdss)
APT75F50L Applications
There are a lot of Microsemi Corporation
APT75F50L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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