APT47N60BC3G
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- Mfr.Part #
- APT47N60BC3G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247
- Stock
- 7,436
- In Stock ：
- 7,436
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 30A, 10V
- JEDEC-95 Code :
- TO-247AD
- Radiation Hardening :
- No
- Height :
- 5.31mm
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 38.000013g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Length :
- 21.46mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Rating :
- 47A
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 47A
- Turn On Delay Time :
- 18 ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Vgs(th) (Max) @ Id :
- 3.9V @ 2.7mA
- Turn-Off Delay Time :
- 110 ns
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 417W Tc
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Transistor Application :
- SWITCHING
- Published :
- 1997
- Mount :
- Through Hole
- Power Dissipation :
- 417W
- Input Capacitance (Ciss) (Max) @ Vds :
- 7015pF @ 25V
- Terminal Position :
- Single
- Resistance :
- 70mOhm
- Pbfree Code :
- yes
- Width :
- 16.26mm
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 8 ns
- Rise Time :
- 27ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Datasheets
- APT47N60BC3G
N-Channel Tube 70m Ω @ 30A, 10V ±20V 7015pF @ 25V 260nC @ 10V TO-247-3
APT47N60BC3G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7015pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 47A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT47N60BC3G Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
APT47N60BC3G Applications
There are a lot of Microsemi Corporation
APT47N60BC3G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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