APT43M60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

48 ns

Power Dissipation-Max :

780W Tc

Pbfree Code :

yes

Width :

16.26mm

Input Capacitance (Ciss) (Max) @ Vds :

8590pF @ 25V

Voltage - Rated DC :

600V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

145 ns

Radiation Hardening :

No

Series :

POWER MOS 8™

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

45A

Number of Terminations :

3

Fall Time (Typ) :

44 ns

JESD-609 Code :

e3

Packaging :

Tube

Factory Lead Time :

19 Weeks

Case Connection :

DRAIN

Length :

21.46mm

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Weight :

38.000013g

Vgs (Max) :

±30V

Current Rating :

43A

Rise Time :

55ns

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Power Dissipation :

780W

Rds On (Max) @ Id, Vgs :

150m Ω @ 21A, 10V

Pin Count :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Published :

1997

Terminal Finish :

PURE MATTE TIN

Package / Case :

TO-247-3 Variant

Height :

5.31mm