APT41M80B2
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- Mfr.Part #
- APT41M80B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 43A T-MAX
- Stock
- 28,358
- In Stock ：
- 28,358
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 20A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 60 ns
- Power Dissipation-Max :
- 1040W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Turn On Delay Time :
- 46 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Turn-Off Delay Time :
- 200 ns
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Factory Lead Time :
- 29 Weeks
- JEDEC-95 Code :
- TO-247AD
- Rise Time :
- 65ns
- Current Rating :
- 41A
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3 Variant
- Published :
- 1997
- Terminal Finish :
- PURE MATTE TIN
- Series :
- POWER MOS 8™
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 8070pF @ 25V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Packaging :
- Tube
- Number of Elements :
- 1
- Power Dissipation :
- 1.04kW
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 43A
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 800V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Transistor Application :
- SWITCHING
- Datasheets
- APT41M80B2
N-Channel Tube 210m Ω @ 20A, 10V ±30V 8070pF @ 25V 260nC @ 10V TO-247-3 Variant
APT41M80B2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8070pF @ 25V.This device conducts a continuous drain current (ID) of 43A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 200 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 46 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT41M80B2 Features
a continuous drain current (ID) of 43A
the turn-off delay time is 200 ns
APT41M80B2 Applications
There are a lot of Microsemi Corporation
APT41M80B2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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